The k p Method: Electronic Properties of Semiconductors book
Par coady erin le dimanche, juin 14 2015, 22:11 - Lien permanent
The k p Method: Electronic Properties of Semiconductors by Lok C. Lew Yan Voon, Morten Willatzen
The k p Method: Electronic Properties of Semiconductors epub
The k p Method: Electronic Properties of Semiconductors Lok C. Lew Yan Voon, Morten Willatzen ebook
ISBN: 3540928715, 9783540928713
Format: pdf
Page: 450
Publisher: Springer
Modeling the electronic, optical and transport properties of semiconductor nanowires : From ab initio to k.p and tightbinding methods. Recent experiments motivated us to calculate electronic properties and g factors the WZ phase of non-nitride III-V semiconductors as they do not naturally occur. That are studied most extensively by optical methods are induced by quantum band k.p (Jiang and Singh 1997, Pryor 1998, Stier et al. 2.4 Envelope function approximation: the k.p method for nanos- tructures . Electronic properties of semiconductor nanowires. (2009) The k.p Method - Electronic Properties of Semiconductors, Springer, Berlin (ISBN 978-3-540-92871-3), 445 pages. 3 Electronic and optical properties of wide gap semiconductor nanowires. Lew Yan Voon LC, Zhang Y Results obtained using empirical k.p, empirical tight-binding, semi-empirical pseudopotential, and with ab initio methods are compared. The results fect of strain on the electronic system of a semiconductor may be modeled . Willatzen, The K.P Method: Electronic Properties of Semiconductors (Springer, 2009). Alloy using the kp perturbation method coupled with deformation potential theory. Properties of strained and relaxed silicon germanium.